Input-Referred Low-Frequency Noise Analysis for Single-Layer Graphene FETs

The bias dependence of input-referred low-frequency noise (LFN), S VG , is a considerable facet for RF circuit design. was considered constant in CMOS but this contradicted by recent experimental and theoretical studies. In brief, the behavior investigated single-layer graphene transistors (GFETs) based on recently established physics-based compact model. A minimum recorded at point where transconductance maximum which coincides with peak well-known M-shape normalized output LFN; model precisely captures trend. Mobility fluctuation effect increases toward lower currents near charge neutrality (CNP), while carrier number series resistance effects mostly contribute away from CNP; thus, obtains parabolic shape versus gate voltage similar to devices.